一个2.5 GHz单片硅图像抑制滤波器

Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference Pub Date : 1996-05-05 DOI:10.1109/CICC.1996.510541

J. Macedo, M. Copeland, P. Schvan

{"title":"一个2.5 GHz单片硅图像抑制滤波器","authors":"J. Macedo, M. Copeland, P. Schvan","doi":"10.1109/CICC.1996.510541","DOIUrl":null,"url":null,"abstract":"A low power 2.5 GHz monolithic silicon bipolar image rejection filter for superheterodyne receiver application is presented; which uses an on-chip inductor and a negative resistance circuit to realize a notch filter with better than 50 dB rejection (measured) at the image frequency. Using 0.8 micron BiCMOS technology a tuned amplifier was fabricated with 1.9 GHz passband, a deep notch at 2.5 GHz to attenuate the image frequency (assuming 300 MHz intermediate frequency (IF)), and 3.2 mA current consumption at +3 V. A second chip incorporated a varactor to add notch frequency tuning capability over a 239 MHz range.","PeriodicalId":74515,"journal":{"name":"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference","volume":"53 1","pages":"193-196"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 2.5 GHz monolithic silicon image reject filter\",\"authors\":\"J. Macedo, M. Copeland, P. Schvan\",\"doi\":\"10.1109/CICC.1996.510541\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low power 2.5 GHz monolithic silicon bipolar image rejection filter for superheterodyne receiver application is presented; which uses an on-chip inductor and a negative resistance circuit to realize a notch filter with better than 50 dB rejection (measured) at the image frequency. Using 0.8 micron BiCMOS technology a tuned amplifier was fabricated with 1.9 GHz passband, a deep notch at 2.5 GHz to attenuate the image frequency (assuming 300 MHz intermediate frequency (IF)), and 3.2 mA current consumption at +3 V. A second chip incorporated a varactor to add notch frequency tuning capability over a 239 MHz range.\",\"PeriodicalId\":74515,\"journal\":{\"name\":\"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference\",\"volume\":\"53 1\",\"pages\":\"193-196\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1996.510541\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1996.510541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

提出了一种用于超外差接收机的低功耗单片硅双极图像抑制滤波器;该滤波器采用片上电感和负电阻电路，在图像频率下实现抑制度大于50db的陷波滤波器。采用0.8微米BiCMOS技术制作了1.9 GHz通带、2.5 GHz深陷波以衰减图像频率(假设300 MHz中频)、+3 V电流消耗3.2 mA的调谐放大器。第二个芯片集成了一个变容管，以增加在239 MHz范围内的陷波频率调谐能力。

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A 2.5 GHz monolithic silicon image reject filter

A low power 2.5 GHz monolithic silicon bipolar image rejection filter for superheterodyne receiver application is presented; which uses an on-chip inductor and a negative resistance circuit to realize a notch filter with better than 50 dB rejection (measured) at the image frequency. Using 0.8 micron BiCMOS technology a tuned amplifier was fabricated with 1.9 GHz passband, a deep notch at 2.5 GHz to attenuate the image frequency (assuming 300 MHz intermediate frequency (IF)), and 3.2 mA current consumption at +3 V. A second chip incorporated a varactor to add notch frequency tuning capability over a 239 MHz range.

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来源期刊

Proceedings of the ... Custom Integrated Circuits Conference. Custom Integrated Circuits Conference

CiteScore

3.80

自引率

0.00%

发文量