NH/ sub3 /和SiH/ sub4 /在185 nm直接光解沉积氮化硅及其在InP misfet中的应用

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147436

N. Proust, M. Petitjean, J. Perrin

{"title":"NH/ sub3 /和SiH/ sub4 /在185 nm直接光解沉积氮化硅及其在InP misfet中的应用","authors":"N. Proust, M. Petitjean, J. Perrin","doi":"10.1109/ICIPRM.1991.147436","DOIUrl":null,"url":null,"abstract":"The preparation of high quality silicon nitride films by direct photolysis of NH/sub 3/-SiH/sub 4/ at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250 degrees C, a critical field of 4 MV/cm and a resistivity of 6*10/sup 15/ Omega -cm are observed. For annealed samples. a density of states of 4*10/sup 11/ cm/sup -2/ eV/sup -1/ is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N/sup +/ contact layer is described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"98 1","pages":"551-554"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicon nitride deposited by direct photolysis of NH/sub 3/ and SiH/sub 4/ at 185 nm and its application to InP MISFETs\",\"authors\":\"N. Proust, M. Petitjean, J. Perrin\",\"doi\":\"10.1109/ICIPRM.1991.147436\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The preparation of high quality silicon nitride films by direct photolysis of NH/sub 3/-SiH/sub 4/ at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250 degrees C, a critical field of 4 MV/cm and a resistivity of 6*10/sup 15/ Omega -cm are observed. For annealed samples. a density of states of 4*10/sup 11/ cm/sup -2/ eV/sup -1/ is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N/sup +/ contact layer is described.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"98 1\",\"pages\":\"551-554\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147436\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

讨论了低温直接光解NH/sub 3/-SiH/sub 4/制备高质量氮化硅薄膜及其在InP衬底上的沉积。薄膜的原子组成由核分析确定。为了优化体积和界面特性，在1 MHz下对MIS二极管进行了准静态I(V)和C(V)特性测量。在250℃时，观察到临界场为4 MV/cm，电阻率为6*10/sup 15/ Omega -cm。退火样品。态密度为4*10/sup 11/ cm/sup -2/ eV/sup -1/，由特曼分析确定。本文描述了无凹槽和N/sup +/接触层的InP耗尽型MISFET的初步制备。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Silicon nitride deposited by direct photolysis of NH/sub 3/ and SiH/sub 4/ at 185 nm and its application to InP MISFETs

The preparation of high quality silicon nitride films by direct photolysis of NH/sub 3/-SiH/sub 4/ at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250 degrees C, a critical field of 4 MV/cm and a resistivity of 6*10/sup 15/ Omega -cm are observed. For annealed samples. a density of states of 4*10/sup 11/ cm/sup -2/ eV/sup -1/ is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N/sup +/ contact layer is described.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

自引率

0.00%

发文量