在BiCMOS 55nm中使用PN结二极管进行毫米波功率检测，用于原位大信号表征

2018 48th European Microwave Conference (EuMC) Pub Date : 2018-09-01 DOI:10.23919/EUMC.2018.8541387

Joao CarlosAzevedo Goncalves, I. Alaji, D. Gloria, V. Gidel, F. Gianesello, S. Lépilliet, G. Ducournau, F. Danneville, C. Gaquière

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引用次数: 3

摘要

本文描述了毫米波(mmW)晶圆上功率检测，采用专用高频二极管结，截止频率(fc)为400 GHz，集成了意法半导体(STMicroelectronics)的SiGe BiCMOS 55 nm技术。该提取是为了在110 GHz以上的毫米波频率范围内开发晶体管或MMIC大信号特性的完全集成功率检测。功率检测是通过对二极管的正向偏置来实现的。这使我们能够在无与伦比的二极管上获得320 GHz时在426 V/W到3836 V/W之间的可调电压响应度(y)。在此配置中，可以根据配置调整相应的动态范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

This paper describes millimetre wave (mmW) on-wafer power detection using dedicated high frequency diode junction with a cut-off frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed in order to develop fully integrated power detection for transistor or MMIC large signal characterisation on mmW frequency range above 110 GHz. The power detection is performed by biasing the diode in its forward regime. That allows us to obtain an adjustable voltage responsivity (ϒ) between 426 V/W and 3836 V/W at 320 GHz on the unmatched diode. In this configuration the corresponding dynamic range can be adjusted depending upon the configuration.

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2018 48th European Microwave Conference (EuMC)

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