氚在SiC上的行为

IF 0.3 1区艺术学 0 MUSIC

NINETEENTH CENTURY MUSIC Pub Date : 2002-11-07 DOI:10.1109/FUSION.2002.1027667

K. Katayama, M. Nishikawa, T. Takeishi

{"title":"氚在SiC上的行为","authors":"K. Katayama, M. Nishikawa, T. Takeishi","doi":"10.1109/FUSION.2002.1027667","DOIUrl":null,"url":null,"abstract":"SiC (silicon carbide) has been considered as one of the primary candidate materials for a first wall component in a future fusion reactor because it has been claimed that SiC has excellent high temperature properties and low activation. However, the behavior of tritium on SiC has not been discussed yet. In this study, the tritium trapping capacity on the surface of SiC is experimentally obtained as about 10/sup 10/ Bq/m/sup 2/ at the temperature range of 298K- 1073K in consideration of the static system effect. It is also observed that tritium is trapped to the surface through hydrogen isotope exchange reaction. The isotope exchange reaction rate between tritiated water in a gas phase and hydrogen on the surface is quantified at the temperature of 298K, 773K, 973K in consideration of the kinetic system effect by the numerical curve fitting method applying the serial reactor model. The reaction rate is observed to be constant at 3.48 /spl times/ 10/sup -5/ m/s. The comparison of tritium properties of SiC with that of graphite or stainless steel is also discussed.","PeriodicalId":44192,"journal":{"name":"NINETEENTH CENTURY MUSIC","volume":null,"pages":null},"PeriodicalIF":0.3000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tritium behavior on SiC\",\"authors\":\"K. Katayama, M. Nishikawa, T. Takeishi\",\"doi\":\"10.1109/FUSION.2002.1027667\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiC (silicon carbide) has been considered as one of the primary candidate materials for a first wall component in a future fusion reactor because it has been claimed that SiC has excellent high temperature properties and low activation. However, the behavior of tritium on SiC has not been discussed yet. In this study, the tritium trapping capacity on the surface of SiC is experimentally obtained as about 10/sup 10/ Bq/m/sup 2/ at the temperature range of 298K- 1073K in consideration of the static system effect. It is also observed that tritium is trapped to the surface through hydrogen isotope exchange reaction. The isotope exchange reaction rate between tritiated water in a gas phase and hydrogen on the surface is quantified at the temperature of 298K, 773K, 973K in consideration of the kinetic system effect by the numerical curve fitting method applying the serial reactor model. The reaction rate is observed to be constant at 3.48 /spl times/ 10/sup -5/ m/s. The comparison of tritium properties of SiC with that of graphite or stainless steel is also discussed.\",\"PeriodicalId\":44192,\"journal\":{\"name\":\"NINETEENTH CENTURY MUSIC\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.3000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"NINETEENTH CENTURY MUSIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FUSION.2002.1027667\",\"RegionNum\":1,\"RegionCategory\":\"艺术学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"MUSIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"NINETEENTH CENTURY MUSIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FUSION.2002.1027667","RegionNum":1,"RegionCategory":"艺术学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"MUSIC","Score":null,"Total":0}

引用次数: 0

摘要

SiC(碳化硅)被认为是未来核聚变反应堆第一壁组件的主要候选材料之一，因为它具有优异的高温性能和低活化性。然而，氚在碳化硅上的行为尚未得到讨论。在本研究中，在298K- 1073K温度范围内，考虑到静态体系效应，实验得到SiC表面的氚捕获容量约为10/sup 10/ Bq/m/sup 2/。还观察到氚通过氢同位素交换反应被捕获到表面。考虑动力学系统效应，采用串联反应器模型，采用数值曲线拟合的方法，量化了298K、773K、973K温度下气相氚化水与表面氢的同位素交换反应速率。观察到反应速率恒定在3.48 /spl次/ 10/sup -5/ m/s。并对碳化硅与石墨、不锈钢的氚性能进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Tritium behavior on SiC

SiC (silicon carbide) has been considered as one of the primary candidate materials for a first wall component in a future fusion reactor because it has been claimed that SiC has excellent high temperature properties and low activation. However, the behavior of tritium on SiC has not been discussed yet. In this study, the tritium trapping capacity on the surface of SiC is experimentally obtained as about 10/sup 10/ Bq/m/sup 2/ at the temperature range of 298K- 1073K in consideration of the static system effect. It is also observed that tritium is trapped to the surface through hydrogen isotope exchange reaction. The isotope exchange reaction rate between tritiated water in a gas phase and hydrogen on the surface is quantified at the temperature of 298K, 773K, 973K in consideration of the kinetic system effect by the numerical curve fitting method applying the serial reactor model. The reaction rate is observed to be constant at 3.48 /spl times/ 10/sup -5/ m/s. The comparison of tritium properties of SiC with that of graphite or stainless steel is also discussed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

NINETEENTH CENTURY MUSIC MUSIC-

CiteScore

0.40

自引率

0.00%

发文量

期刊介绍： 19th-Century Music covers all aspects of Western art music between the mid-eighteenth and mid-twentieth centuries. We welcome--in no particular order--considerations of composers and compositions, styles, performance, historical watersheds, cultural formations, critical methods, musical institutions, ideas, and topics not named on this list. Our aim is to publish contributions to ongoing conversations at the leading edge of musical and multidisciplinary scholarship.