{"title":"用于亚10nm光刻的新型定向自组装嵌段共聚物的设计与合成","authors":"Jie Li, Xuemiao Li, H. Deng","doi":"10.1109/CSTIC.2017.7919776","DOIUrl":null,"url":null,"abstract":"A series of novel block copolymers, PS-b-PPDMA, were synthesized via anionic polymerization. Small-angle X-ray scattering (SAXS) spectra and Transmission electron microscope (TEM) images indicated lamella or hexagonal structures with a sub-10 nm half-pitch formed under mild thermal annealing condition. The assembly condition is as quick as 5 min or less at 100 °C thermal annealing. The smallest lamellar D spacing is 11.8 nm. These block copolymers show the potential as DSA material with high intrinsic resolution for sub-10 nm and beyond nodes.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"55 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and synthesis of novel directed self-assembly block copolymers for sub-10 nm lithography application\",\"authors\":\"Jie Li, Xuemiao Li, H. Deng\",\"doi\":\"10.1109/CSTIC.2017.7919776\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A series of novel block copolymers, PS-b-PPDMA, were synthesized via anionic polymerization. Small-angle X-ray scattering (SAXS) spectra and Transmission electron microscope (TEM) images indicated lamella or hexagonal structures with a sub-10 nm half-pitch formed under mild thermal annealing condition. The assembly condition is as quick as 5 min or less at 100 °C thermal annealing. The smallest lamellar D spacing is 11.8 nm. These block copolymers show the potential as DSA material with high intrinsic resolution for sub-10 nm and beyond nodes.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"55 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919776\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and synthesis of novel directed self-assembly block copolymers for sub-10 nm lithography application
A series of novel block copolymers, PS-b-PPDMA, were synthesized via anionic polymerization. Small-angle X-ray scattering (SAXS) spectra and Transmission electron microscope (TEM) images indicated lamella or hexagonal structures with a sub-10 nm half-pitch formed under mild thermal annealing condition. The assembly condition is as quick as 5 min or less at 100 °C thermal annealing. The smallest lamellar D spacing is 11.8 nm. These block copolymers show the potential as DSA material with high intrinsic resolution for sub-10 nm and beyond nodes.
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