研究低压条件下仅mosfet开关电容ΔΣ调制器的线性度

F. A. Parsan, A. Ayatollahi, A. Abrishamifar
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引用次数: 0

摘要

研究了耗尽型MOS电容的不对称工作条件对单mosfet开关电容ΔΣ调制器线性度的影响。在极低电压开关电容电路中,运放输入和输出共模电平是分开的,为MOS开关提供最大的超速电压。这会导致电容器在工作期间产生不对称的电压降。另一方面,当工作在对称条件下时,耗尽模式MOS电容器是线性的。模拟了这种增加的非线性对在非对称条件下工作的ΔΣ调制器的影响,并将结果与在对称条件下工作的ΔΣ调制器进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigating the linearity of MOSFET-only switched-capacitor ΔΣ modulators under low-voltage condition
Effect of asymmetric operating condition of depletion-mode MOS capacitors on the linearity of MOSFET-only switched-capacitor ΔΣ modulators is investigated. In very low-voltage switched-capacitor circuits the opamp input and output common-mode levels are separated to provide maximum overdrive voltage for MOS switches. This causes an asymmetric voltage drop on capacitors during operation. On the other hand, the depletion-mode MOS capacitors are most linear when operated under a symmetric condition. The effect of this increased nonlinearity on a ΔΣ modulator which is operated under an asymmetric condition is simulated and the results are compared with a ΔΣ modulator which is operated under a symmetric condition.
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