波纹和非波纹超晶格的光学各向异性比较(311)

A. Hallaoui, H. Essaoudi, A. Essahlaoui
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引用次数: 0

摘要

我们用紧密结合的方法报道了瓦楞和非瓦楞(311)(GaAs)/(AlAs)超晶格的电子和光学性质。这些体系是通过分子束外延在(311)GaAs取向衬底上生长的。我们给出了波纹(311)(GaAs)16/(AlAs)16超晶格的价带和导带色散关系(能带结构)。我们研究了非瓦楞(311)(GaAs)8/(AlAs)8超晶格和瓦楞(311)(GaAs)16/(AlAs)16超晶格的最低导带和最高价带带间跃迁概率密度。我们还计算了这些系统的带间跃迁概率。我们发现波纹超晶格的带间跃迁的各向异性率大于非波纹超晶格。我们得出结论,无论研究哪种类型的超晶格,当光偏振从[-2,3,3]方向过渡到[0,-1,1]方向时,光学各向异性减小。从光洞态和类分裂态的跃迁发生相反的情况。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparaison of the Optical Anisotropy of Corrugated and NonCorrugated (311) Superlattices
We report the electronic and optical properties of corrugated and non-corrugated (311) (GaAs)/(AlAs) superlattices using the tight-binding method. These systems grown by molecular beam epitaxy on (311) GaAs oriented substrates. We present the valence and conduction band dispersion relations (band structures) for the corrugated (311) (GaAs)16/(AlAs)16 superlattice. We have studied the probability densities of the lowest conduction band and highest valence band interband transition probabilities of the non-corrugated (311) (GaAs)8/(AlAs)8 superlattice and the corrugated (311) (GaAs)16/(AlAs)16 superlattice. We have also computed the interband transition probabilities for these systems. We found that the anisotropy rate of the interband transitions for the corrugated superlattice is larger than for the non-corrugated superlattice one. We concluded that whatever the type of superlattice studied here, the optical anisotropy is reduced when the light polarization pass from the [-2,3,3] direction to [0,-1,1] direction for the transitions from the heavy-hole-like states. The opposite situation occurs for the transition from the light-hole and split-off-like states.
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