硅片技术的发展

A. Goetzberger, A. Rauber
{"title":"硅片技术的发展","authors":"A. Goetzberger, A. Rauber","doi":"10.1109/PVSC.1988.105932","DOIUrl":null,"url":null,"abstract":"The status of techniques for the production of sheets, ribbons, and foils of silicon for solar cells is reviewed. Technical problems and economic constraints are analyzed. The horizontal support web technique relies on a wedge-shaped growth interface which decouples the pulling velocity and the growth velocity which are nearly perpendicular to each other. The growing ribbon floats on a silicon melt that is contained in a long silicon crucible and is withdrawn to one side. In the ramp assistant foil technique, the silicon melt is contained in a relatively flat crucible that is open on one side. A preheated substrate is moved across this opening, and some of the melt solidifies on the surface. The silicon-sheets-from-powder technique starts from Si powder or granular silicon (grain size: 50-500 mu m). Three steps are needed to obtain the final ribbon. It is concluded that although the basic ideas as well as the results of these three methods are very distinct, evaluation of their respective merits is difficult.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"96 1","pages":"1371-1374 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Development in silicon sheet technologies\",\"authors\":\"A. Goetzberger, A. Rauber\",\"doi\":\"10.1109/PVSC.1988.105932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The status of techniques for the production of sheets, ribbons, and foils of silicon for solar cells is reviewed. Technical problems and economic constraints are analyzed. The horizontal support web technique relies on a wedge-shaped growth interface which decouples the pulling velocity and the growth velocity which are nearly perpendicular to each other. The growing ribbon floats on a silicon melt that is contained in a long silicon crucible and is withdrawn to one side. In the ramp assistant foil technique, the silicon melt is contained in a relatively flat crucible that is open on one side. A preheated substrate is moved across this opening, and some of the melt solidifies on the surface. The silicon-sheets-from-powder technique starts from Si powder or granular silicon (grain size: 50-500 mu m). Three steps are needed to obtain the final ribbon. It is concluded that although the basic ideas as well as the results of these three methods are very distinct, evaluation of their respective merits is difficult.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"96 1\",\"pages\":\"1371-1374 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

综述了太阳能电池用硅片、硅带和硅箔的生产技术现状。分析了技术问题和经济制约因素。水平支撑腹板技术依赖于一个楔形生长界面,该界面解耦了几乎相互垂直的拉拔速度和生长速度。生长的条带漂浮在硅熔体上,硅熔体包含在一个长硅坩埚中,并向一侧收缩。在斜坡辅助箔技术中,硅熔体被包含在一个相对平坦的坩埚中,坩埚在一侧打开。预热过的基材穿过这个开口,一些熔体在表面凝固。硅片制粉技术从硅粉或颗粒硅(粒度50-500 μ m)开始,需要三步才能得到最终的硅带。结果表明,虽然这三种方法的基本思想和结果非常不同,但很难对它们各自的优点进行评价。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development in silicon sheet technologies
The status of techniques for the production of sheets, ribbons, and foils of silicon for solar cells is reviewed. Technical problems and economic constraints are analyzed. The horizontal support web technique relies on a wedge-shaped growth interface which decouples the pulling velocity and the growth velocity which are nearly perpendicular to each other. The growing ribbon floats on a silicon melt that is contained in a long silicon crucible and is withdrawn to one side. In the ramp assistant foil technique, the silicon melt is contained in a relatively flat crucible that is open on one side. A preheated substrate is moved across this opening, and some of the melt solidifies on the surface. The silicon-sheets-from-powder technique starts from Si powder or granular silicon (grain size: 50-500 mu m). Three steps are needed to obtain the final ribbon. It is concluded that although the basic ideas as well as the results of these three methods are very distinct, evaluation of their respective merits is difficult.<>
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CiteScore
1.40
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