45纳米CMOS高效多模共相射频功率放大器

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC) Pub Date : 2015-11-02 DOI:10.1109/ESSCIRC.2015.7313855

A. Banerjee, Lei Ding, R. Hezar

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引用次数: 17

摘要

提出了一种采用无源组合电路的高效多模e类失相射频功率放大器。多模PA通过开关单个支路和使用效率增强电路(EEC)来提高低功率水平下的效率。所提出的功率放大器采用45nm CMOS技术设计。在高功率单电平模式下，PA在2.4GHz时提供31.6 dBm的峰值输出功率，漏极效率为49.2%。对于带宽为10MHz和20MHz的64-QAM LTE信号，采用DPD单电平共相方式可获得-57 dBc和-53 dBc的ACPR。在单电平失相和AMO模式下，当LTE信号的峰均功率比(PAPR)为6 dB时，平均漏极效率分别为25%和33%。

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High efficiency multi-mode outphasing RF power amplifier in 45nm CMOS

A high efficiency multi-mode class-E outphasing RF power amplifier with a passive combining circuit is presented. The multi-mode PA improves efficiency at lower power levels by switching ON and OFF individual branches and using Efficiency Enhancement Circuit (EEC). The proposed power amplifier is designed in 45nm CMOS technology. The PA delivers 31.6 dBm peak output power at 2.4GHz with 49.2% drain efficiency in high power single level mode. For 64-QAM LTE signal with 10MHz and 20MHz bandwidth, -57 dBc and -53 dBc ACPR are obtained in single level outphasing mode with DPD. 25% and 33% average drain efficiency are obtained with LTE signal with 6 dB peak-to-average power ratio (PAPR) in single level outphasing and AMO mode respectively.

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ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)

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