Variation of some physical properties of CuInS2 films by substrate temperature

Received: 21/Mar/2019, Accepted: 11/Apr/2019, Online: 30/Apr/2019 AbstractSpray pyrolysis is one of the most convenient, economical, inexpensive and simple methods for depositing large area semiconducting thin films. Semiconducting ternary CuInS2 thin films have been deposited onto the glass substrate by varying substrate temperature from 275 0 C, at the interval of 25 to 350 0 C by using aqueous solution of Cupric chloride, Indium trichloride and thiourea of 0.02 M and Seems to be one of the more important parameters affecting the physical properties of the semiconductor. The lattice parameter a and c at room temperature of the tetragonal unit cell were calculated for all these samples by Bruker AXS D8 Advance X-ray diffraction (XRD) techniques with Cu Kα (wavelength = 1.5418 Å) radiation.Conductivity of thin films determined by Four Probe method and hot probe technique wasdetermined to exhibit ptype conductivity. Due to temperature effect, shows the atoms are arrange regular in compound of these samples prepared at various temperatures 250, 300 and 350 0 C. As the films are not doped intentionally defect observed in intrinsic nature operative to be produced by Sulphur interstitials. Grain sizes were studied by Scanning Electron Microscope.