CdSe薄膜中的电吸收

T.O. Poehler, D. Abraham
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引用次数: 1

摘要

对真空蒸发CdSe薄膜的光学吸收边进行了测量。在强电场作用下,由于薄膜的多晶性而导致的吸收边变形可达0.02 eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electroabsorption in CdSe films

Measurements have been made on the optical absorption edge in vacuum evaporated CdSe films. The absorption edge, which is distorted due to the polycrystallive nature of the films, is observed to shift up to 0.02 eV under strong electric fields.

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