{"title":"强磁场中恩斯特-埃廷-肖森和珀尔蒂埃-塞贝克功数的关系","authors":"R. Simon","doi":"10.1016/0365-1789(64)90022-0","DOIUrl":null,"url":null,"abstract":"<div><p>The strong-magnetic-field limiting values of the Peltier-Seebeck and the Nernst-Ettingshausen figures of merit for a multiband, multivalley anisotropic semiconductor or semimetal are shown to be related to each other in a simple way as the Fermi energy level is varied. The dimensionless material parameter, which indicates the intrinsic quality of the material, is shown to be the same function of crystallographic orientation for both effects in the strong magnetic field.</p></div>","PeriodicalId":100032,"journal":{"name":"Advanced Energy Conversion","volume":"4 4","pages":"Pages 237-246"},"PeriodicalIF":0.0000,"publicationDate":"1964-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0365-1789(64)90022-0","citationCount":"2","resultStr":"{\"title\":\"Relationship between nernst-ettingshausen and peltier-seebeck figures of merit in strong magnetic field\",\"authors\":\"R. Simon\",\"doi\":\"10.1016/0365-1789(64)90022-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The strong-magnetic-field limiting values of the Peltier-Seebeck and the Nernst-Ettingshausen figures of merit for a multiband, multivalley anisotropic semiconductor or semimetal are shown to be related to each other in a simple way as the Fermi energy level is varied. The dimensionless material parameter, which indicates the intrinsic quality of the material, is shown to be the same function of crystallographic orientation for both effects in the strong magnetic field.</p></div>\",\"PeriodicalId\":100032,\"journal\":{\"name\":\"Advanced Energy Conversion\",\"volume\":\"4 4\",\"pages\":\"Pages 237-246\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1964-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0365-1789(64)90022-0\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Energy Conversion\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0365178964900220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Energy Conversion","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0365178964900220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Relationship between nernst-ettingshausen and peltier-seebeck figures of merit in strong magnetic field
The strong-magnetic-field limiting values of the Peltier-Seebeck and the Nernst-Ettingshausen figures of merit for a multiband, multivalley anisotropic semiconductor or semimetal are shown to be related to each other in a simple way as the Fermi energy level is varied. The dimensionless material parameter, which indicates the intrinsic quality of the material, is shown to be the same function of crystallographic orientation for both effects in the strong magnetic field.
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