硅太阳能电池的扩展红外响应和杂质光伏效应

M. Keevers, M. Green
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引用次数: 45

摘要

利用硅太阳能电池的亚带隙光谱响应测量来表征器件的红外响应,并研究杂质光伏(IPV)效应以改善器件的红外响应。前者除了建立了一个基线情况外,还改进了对晶体硅的子间隙吸收系数的测定。吸收系数值低至10/sup -7/ cm/sup -1/,揭示了由于3声子和4声子辅助吸收的结构。考虑了自由载流子吸收、带隙变窄和Franz-Keldysh效应对细胞红外响应的影响。研究了铟在高效块体电池和薄膜电池中的IPV效应,发现铟改善了它们的红外响应。确定了铟能级的电子光发射截面,这是模拟铟的IPV效应的关键参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Extended infrared response of silicon solar cells and the impurity photovoltaic effect
Sub-bandgap spectral response measurements on silicon solar cells are used to characterise the infrared response of present devices, and to investigate the impurity photovoltaic (IPV) effect for improving their infrared response. The former has, aside from establishing a baseline case, led to an improved determination of the subgap absorption coefficient of crystalline silicon. Absorption coefficient values as low as 10/sup -7/ cm/sup -1/ have been determined, revealing structure due to 3- and 4-phonon assisted absorption. The influences of free carrier absorption, bandgap narrowing, and the Franz-Keldysh effect on cell infrared response are considered. Investigation of the IPV effect of indium in high efficiency bulk and thin film cells reveals that indium improves their infrared response. The cross-section for electron photoemission from the indium level, a crucial parameter for modelling indium's IPV effect, is determined.
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