p掺杂Si soi - mosfet的单掺杂记忆效应

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI:10.1109/SNW.2010.5562582

E. Hamid, Juli Cha Tarido, Sakito Miki, T. Mizuno, D. Moraru, M. Tabe

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引用次数: 0

摘要

通过实验和模拟研究了低掺杂体系中单电子的充电。仿真结果与实验结果吻合较好。这为理解少掺杂系统中单电子充电的物理特性，为未来的单掺杂存储器件设计规则提供了强有力的支持。

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Single-dopant memory effect in P-doped Si SOI-MOSFETs

We investigated single electron charging in few-dopant systems by experiment and simulation. Our simulation results are in good agreement with experimental results. This provides a strong support for understanding the physics of single electron charging in few-dopant systems for future single dopant memory device design rules.

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2010 Silicon Nanoelectronics Workshop

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