{"title":"CdS:As/电解质太阳能电池厚度依赖性电学行为的一些研究","authors":"L.P. Deshmukh, P.P. Hankare, V.S. Sawant","doi":"10.1016/0379-6787(91)90097-9","DOIUrl":null,"url":null,"abstract":"<div><p>An investigation has been made into the effect of photoelectrode thickness on the photovoltaic properties of cadmium sulphide/electrolyte solar cells. CdS photoelectrodes of various thicknesses doped with 0.25 wt.% arsenic were prepared by a chemical deposition process on plane mirror smooth stainless steel substrates. An electrode/ electrolyte junction cell was designed for use in a glass cuvette and has been analysed in terms of its electrical parameters. The thickness of the photoelectrode was found to cause significant changes in cell parameters such as short-circuit current, open-circuit voltage, series and shunt resistances, efficiency, fill factor, junction quality factors and flat band potential.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"31 6","pages":"Pages 549-557"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90097-9","citationCount":"23","resultStr":"{\"title\":\"Some investigations on thickness-dependent electrical behaviour of CdS:As/electrolyte solar cells\",\"authors\":\"L.P. Deshmukh, P.P. Hankare, V.S. Sawant\",\"doi\":\"10.1016/0379-6787(91)90097-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>An investigation has been made into the effect of photoelectrode thickness on the photovoltaic properties of cadmium sulphide/electrolyte solar cells. CdS photoelectrodes of various thicknesses doped with 0.25 wt.% arsenic were prepared by a chemical deposition process on plane mirror smooth stainless steel substrates. An electrode/ electrolyte junction cell was designed for use in a glass cuvette and has been analysed in terms of its electrical parameters. The thickness of the photoelectrode was found to cause significant changes in cell parameters such as short-circuit current, open-circuit voltage, series and shunt resistances, efficiency, fill factor, junction quality factors and flat band potential.</p></div>\",\"PeriodicalId\":101172,\"journal\":{\"name\":\"Solar Cells\",\"volume\":\"31 6\",\"pages\":\"Pages 549-557\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0379-6787(91)90097-9\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solar Cells\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0379678791900979\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Cells","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0379678791900979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Some investigations on thickness-dependent electrical behaviour of CdS:As/electrolyte solar cells
An investigation has been made into the effect of photoelectrode thickness on the photovoltaic properties of cadmium sulphide/electrolyte solar cells. CdS photoelectrodes of various thicknesses doped with 0.25 wt.% arsenic were prepared by a chemical deposition process on plane mirror smooth stainless steel substrates. An electrode/ electrolyte junction cell was designed for use in a glass cuvette and has been analysed in terms of its electrical parameters. The thickness of the photoelectrode was found to cause significant changes in cell parameters such as short-circuit current, open-circuit voltage, series and shunt resistances, efficiency, fill factor, junction quality factors and flat band potential.