{"title":"辐照n型硅的空位产生","authors":"O.O. Awadelkarim","doi":"10.1016/0378-4363(88)90069-1","DOIUrl":null,"url":null,"abstract":"<div><p>Measurements of loss factor and capacitance made on single crystals of P-doped n-type silicon are reported. Samples are irradiated with (1.00 ± 0.20) MeV electrons at temperatures <12K. The production of divacancies in the irradiated samples is monitored using hopping conductivity changes at 4.2 K. Higher divacancy production is observed in Czochralski-grown samples and samples containing appreciable concentrations of group III impurities. This suggests that oxygen and group III impurities trap the self interstitials, mobile under irradiation conditions, thus, inhibiting divacancy-self-interstitials annihilation. Effects of irradiation on the free carriers conductivity of the samples are also investigated.</p></div>","PeriodicalId":101023,"journal":{"name":"Physica B+C","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1988-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-4363(88)90069-1","citationCount":"0","resultStr":"{\"title\":\"Divacancies production in irradiated n-type silicon\",\"authors\":\"O.O. Awadelkarim\",\"doi\":\"10.1016/0378-4363(88)90069-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Measurements of loss factor and capacitance made on single crystals of P-doped n-type silicon are reported. Samples are irradiated with (1.00 ± 0.20) MeV electrons at temperatures <12K. The production of divacancies in the irradiated samples is monitored using hopping conductivity changes at 4.2 K. Higher divacancy production is observed in Czochralski-grown samples and samples containing appreciable concentrations of group III impurities. This suggests that oxygen and group III impurities trap the self interstitials, mobile under irradiation conditions, thus, inhibiting divacancy-self-interstitials annihilation. Effects of irradiation on the free carriers conductivity of the samples are also investigated.</p></div>\",\"PeriodicalId\":101023,\"journal\":{\"name\":\"Physica B+C\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0378-4363(88)90069-1\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica B+C\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0378436388900691\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B+C","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378436388900691","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Divacancies production in irradiated n-type silicon
Measurements of loss factor and capacitance made on single crystals of P-doped n-type silicon are reported. Samples are irradiated with (1.00 ± 0.20) MeV electrons at temperatures <12K. The production of divacancies in the irradiated samples is monitored using hopping conductivity changes at 4.2 K. Higher divacancy production is observed in Czochralski-grown samples and samples containing appreciable concentrations of group III impurities. This suggests that oxygen and group III impurities trap the self interstitials, mobile under irradiation conditions, thus, inhibiting divacancy-self-interstitials annihilation. Effects of irradiation on the free carriers conductivity of the samples are also investigated.
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