用于80V GaN HEMT栅极驱动器的参考电压发生器

2021 6th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2021-10-22 DOI:10.1109/ICICM54364.2021.9660339

Ningye He, De-Zhong Zhou, Li Wang, Yuan Xu, Xiaoxiong He, Zhenhai Chen

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引用次数: 1

摘要

基于0.18μm 80V BCD工艺，设计了一种无高压低降稳压器的GaN HEMT栅极驱动器参考电压发生器，主要由高压带隙参考电压和运算跨导放大器组成。通过曲率补偿技术，在$-25^{\circ}}$到$100^{\circ}}\mathrm{C}$的温度范围内，可实现5V至80V的低温度系数和宽电源电压范围。仿真和实测结果表明，所提出的基准电压发生器功能正确，能够很好地满足80V GaN HEMT栅极驱动器的应用要求。

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Reference Voltage Generator for 80V GaN HEMT Gate Driver

Based on 0.18μm 80V BCD process, a reference voltage generator for GaN HEMT gate driver without high voltage low dropout regulator is designed, which is mainly composed of high-voltage bandgap reference and operational transconductance amplifier. It can achieve a low temperature coefficient with a wide supply voltage range from 5V to 80V in the temperature range from $-25^{\circ}\mathrm{C}$ to $100^{\circ}\mathrm{C}$ by curvature compensation technology. The simulated and measured results show that the function of the proposed reference voltage generator is correct, which can well meet the application requirements of 80V GaN HEMT gate driver.

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2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)

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