利用无接触光电化学(CL-PEC)蚀刻技术制备凹栅AlGaN/GaN Hemts

{"title":"利用无接触光电化学(CL-PEC)蚀刻技术制备凹栅AlGaN/GaN Hemts","authors":"M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, Takeshi Tanaka, Taketomo Sato","doi":"10.1149/ma2020-02261818mtgabs","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of Recessed-Gate AlGaN/GaN Hemts Utilizing Contactless Photo-Electrochemical (CL-PEC) Etching\",\"authors\":\"M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, Takeshi Tanaka, Taketomo Sato\",\"doi\":\"10.1149/ma2020-02261818mtgabs\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":22504,\"journal\":{\"name\":\"The Japan Society of Applied Physics\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Japan Society of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/ma2020-02261818mtgabs\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/ma2020-02261818mtgabs","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}