在0.8 /spl μ m CMOS芯片上实现的热微结构可靠性表征

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843900

L. Sheng, C. De Tandt, W. Ranson, R. Vounckx

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引用次数: 0

摘要

本文讨论了在工业0.8 /spl μ m CMOS芯片上实现的热微结构的可靠性表征。在高温运行下，识别和评估了各种退化和失效机制。研究结果可用于优化基于CMOS芯片的热传感器设计。

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Reliability characterization of thermal micro-structures implemented on 0.8 /spl mu/m CMOS chips

This paper discusses the reliability characterization of thermal microstructures implemented on industrial 0.8 /spl mu/m CMOS chips. Various degradation and failure mechanisms are identified and evaluated under high temperature operation. The results can be used to optimize the design of thermally based microsensors on CMOS chips.

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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