Z. Chai, W. Zhang, R. Degraeve, S. Clima, F. Hatem, J. F. Zhang, P. Freitas, J. Marsland, A. Fantini, D. Garbin, L. Goux, G. Kar
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Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors
Comprehensive experimental and simulation evidence of the filamentary-type switching and Vth relaxation mechanism associated with defect charging/discharging in GexSe1-xovonic threshold switching (OTS) selector is reported. For the first time, area independence of conduction current at both on/off states, Weibull distribution of time-to-switch-on/off (t-on/off), Vth relaxation and its dependence on time, bias and temperature, which is in good agreement with our first-principles simulations in density functional theory, provide strong support for filament modulation by defect delocalzation/localization that is responsible for volatile switching.
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