{"title":"基于蓝宝石和ScAlMgO4(0001)衬底的高强度绿色发光iii族氮化发光二极管结构的综合研究","authors":"F. Z. Tithy, S. Hussain","doi":"10.15407/spqeo26.02.215","DOIUrl":null,"url":null,"abstract":"To mitigate the green gap problems existing in GaN/InGaN/AlGaN system on sapphire substrate, an In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN based LED structure on ScAlMgO4 (0001) substrate has been introduced for green light (525…565 nm) emission. On ScAlMgO4 (0001) substrate, 35% of In composition with 1.6 nm well thickness and only 15% of Al composition with 1.1 nm thick AlGaN as capping layer on top provide the best LED structure. It provides minimum equivalent lattice mismatch (0.01%) with reasonable overall elastic energy value (0.47 J/m2). Most importantly, it provides at least 10% brighter green light emission than that of sapphire based LED structure.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"87 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission\",\"authors\":\"F. Z. Tithy, S. Hussain\",\"doi\":\"10.15407/spqeo26.02.215\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To mitigate the green gap problems existing in GaN/InGaN/AlGaN system on sapphire substrate, an In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN based LED structure on ScAlMgO4 (0001) substrate has been introduced for green light (525…565 nm) emission. On ScAlMgO4 (0001) substrate, 35% of In composition with 1.6 nm well thickness and only 15% of Al composition with 1.1 nm thick AlGaN as capping layer on top provide the best LED structure. It provides minimum equivalent lattice mismatch (0.01%) with reasonable overall elastic energy value (0.47 J/m2). Most importantly, it provides at least 10% brighter green light emission than that of sapphire based LED structure.\",\"PeriodicalId\":21598,\"journal\":{\"name\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"volume\":\"87 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo26.02.215\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo26.02.215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comprehensive study of group III-nitride light emitting diode structures based on sapphire and ScAlMgO4 (0001) substrate for high intensity green emission
To mitigate the green gap problems existing in GaN/InGaN/AlGaN system on sapphire substrate, an In0.17Ga0.83N/InxGa1–xN/AlyGa1–yN based LED structure on ScAlMgO4 (0001) substrate has been introduced for green light (525…565 nm) emission. On ScAlMgO4 (0001) substrate, 35% of In composition with 1.6 nm well thickness and only 15% of Al composition with 1.1 nm thick AlGaN as capping layer on top provide the best LED structure. It provides minimum equivalent lattice mismatch (0.01%) with reasonable overall elastic energy value (0.47 J/m2). Most importantly, it provides at least 10% brighter green light emission than that of sapphire based LED structure.
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