基于电荷模拟方法的绝缘绝缘气体绝缘管中金属粒子的运动轨迹

N. Rama Rao, J. Amarnath
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引用次数: 1

摘要

本文对单相气体绝缘管(GIB)的绝缘外壳进行了模拟,计算了污染金属颗粒的运动轨迹。建立了金属颗粒在气体绝缘管道中运动规律的数学模型。作用在金属颗粒上的所有力取决于金属颗粒的几何参数、颗粒获得的静电荷、颗粒位置存在的电场、阻力系数和雷诺数。采用龙格库塔法迭代求解运动金属粒子的二阶微分方程。利用电荷模拟方法(CSM)计算了粒子瞬时位置的电场。本文将分析场计算方法与电荷模拟场计算方法进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Metallic particle trajectory in an isolated conductor Gas Insulated Busduct(GIB) with dielectric coated enclosure using Charge Simulation Method
In this paper, Dielectric coated outer enclosure of single phase Gas Insulated Busduct(GIB) is simulated for computing the trajectory of contaminated metal particles. A mathematical model is developed to find the movement pattern of a metallic particle in a Gas Insulated Busduct. All forces acting on the metallic particle depends on GIB geometric parameters, electrostatic charge acquired by the particle, electric field present at the particle location, the drag coefficient and Reynold's number. The second order differential equation of moving metallic particle is solved iteratively using Runge Kutta method. Electric fields at the instantaneous particle locations were computed using the Charge Simulation Method (CSM). The movements of metallic particle with Analytical field calculation are compared with charge simulation field calculation methods and presented in this paper.
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