剪切带对硅铁高斯织构成因的贡献

T. Haratani, W. Hutchinson, I. Dillamore, P. Bate
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引用次数: 131

摘要

摘要对多晶和单晶硅铁进行了冷轧和退火实验。结果表明,冷轧前板料表面下的微观组织状态是模拟加工过程中高斯织构发育成功的重要因素。粗粒表面区在轧制过程中促进剪切带的形成,而这些剪切带在初次再结晶过程中成为成核的优先位置。次级晶粒的成核,也发生在薄片表面之下,似乎依赖于剪切带结构的预先存在。取向为(111)[112]的单晶在冷轧过程中容易产生剪切带,特别是在应变时效条件下。在随后的退火过程中,剪切带首先再结晶,产生具有高斯取向的新晶粒。完全再结晶后的织构与剪切带的织构相同。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Contribution of shear banding to origin of Goss texture in silicon iron
AbstractA number of experiments involving cold rolling and annealing have been carried out on polycrystalline and single crystal silicon iron. It is shown that the microstructural state just beneath the surface of the sheet before cold rolling is an important factor in the successful development of Goss texture during simulated processing. A coarse grained surface zone encourages formation of shear bands during rolling and these become preferential sites for nucleation during primary recrystallization. Nucleation of secondary grains, which also occurs just beneath the sheet surface, appears to be dependent on the prior existence of the shear band structure. Single crystals with the orientation (111)[112] are prone to shear banding during cold rolling especially when strain aging conditions are established. During subsequent annealing the shear bands recrystallize first, producing new grains which have the Goss orientation. The texture after complete recrystallization is the same as that of the shear band ...
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