{"title":"用于MOS二极管表面态捕获截面测量的DLTS技术","authors":"Dipankar Sengupta, M.Mohan Chandra, Vikram Kumar","doi":"10.1016/0378-5963(85)90234-X","DOIUrl":null,"url":null,"abstract":"<div><p>A modified DLTS technique is proposed for the direct measurement of capture cross-section of MOS surface states. The nature of temperature and energy dependence <em>σ</em><sub>n</sub> is inferred from data analysis. Temperature dependence of <em>σ</em><sub>n</sub> is shown to be consistent with the observed DLTS line shapes.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1004-1010"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90234-X","citationCount":"1","resultStr":"{\"title\":\"A DLTS technique for surface state capture cross-section measurement of MOS diodes\",\"authors\":\"Dipankar Sengupta, M.Mohan Chandra, Vikram Kumar\",\"doi\":\"10.1016/0378-5963(85)90234-X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A modified DLTS technique is proposed for the direct measurement of capture cross-section of MOS surface states. The nature of temperature and energy dependence <em>σ</em><sub>n</sub> is inferred from data analysis. Temperature dependence of <em>σ</em><sub>n</sub> is shown to be consistent with the observed DLTS line shapes.</p></div>\",\"PeriodicalId\":100105,\"journal\":{\"name\":\"Applications of Surface Science\",\"volume\":\"22 \",\"pages\":\"Pages 1004-1010\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0378-5963(85)90234-X\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applications of Surface Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/037859638590234X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/037859638590234X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A DLTS technique for surface state capture cross-section measurement of MOS diodes
A modified DLTS technique is proposed for the direct measurement of capture cross-section of MOS surface states. The nature of temperature and energy dependence σn is inferred from data analysis. Temperature dependence of σn is shown to be consistent with the observed DLTS line shapes.
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