单片3D集成电路的伪3D物理设计流程:比较和增强

Heechun Park, B. W. Ku, Kyungwook Chang, D. Shim, S. Lim
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引用次数: 1

摘要

研究表明,单片3D (M3D)集成电路在功率、性能和面积(PPA)指标方面优于现有的基于硅通孔(TSV)的3D集成电路,这主要是由于纳米级单片层间通孔提供了数量级更密集的垂直互连。为了促进行业更快地采用M3D技术,物理设计工具和方法至关重要。最近学术界在开发3D集成电路EDA算法方面的努力,主要针对使用tsv的布局,不足以提供商业质量的GDS布局。最近,伪3D方法已经被设计出来,它利用商业2D集成电路EDA引擎的技巧,帮助它们作为一个有效的3D集成电路CAD工具。在本文中,我们对最先进的伪3d设计流程进行了深入的讨论和公平的比较(定性和定量),并分析了每种设计流程的局限性以及改进其PPA指标的解决方案。此外,我们提出了一种混合伪3d设计流程,实现了这两种好处。我们的改进和混合设计流程提供了高达26%的额外带宽,10%的功耗和23%的功率延迟产品改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Pseudo-3D Physical Design Flow for Monolithic 3D ICs: Comparisons and Enhancements
Studies have shown that monolithic 3D ( M3D ) ICs outperform the existing through-silicon-via ( TSV ) -based 3D ICs in terms of power, performance, and area ( PPA ) metrics, primarily due to the orders of magnitude denser vertical interconnections offered by the nano-scale monolithic inter-tier vias. In order to facilitate faster industry adoption of the M3D technologies, physical design tools and methodologies are essential. Recent academic efforts in developing an EDA algorithm for 3D ICs, mainly targeting placement using TSVs, are inadequate to provide commercial-quality GDS layouts. Lately, pseudo-3D approaches have been devised, which utilize commercial 2D IC EDA engines with tricks that help them operate as an efficient 3D IC CAD tool. In this article, we provide thorough discussions and fair comparisons (both qualitative and quantitative) of the state-of-the-art pseudo-3D design flows, with analysis of limitations in each design flow and solutions to improve their PPA metrics. Moreover, we suggest a hybrid pseudo-3D design flow that achieves both benefits. Our enhancements and the inter-mixed design flow, provide up to an additional 26% wirelength, 10% power consumption, and 23% of power-delay-product improvements.
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