{"title":"横向静电场对β-HgS圆柱形纳米层载流子统计分布的影响","authors":"V. Harutyunyan","doi":"10.4028/p-cvCm7E","DOIUrl":null,"url":null,"abstract":"Analytical expressions are obtained for the wave functions and the energy spectrum of charge carriers in the β-HgS nanolayer of a cylindrical core/shell/shell β-CdS/ β-HgS/ β-CdS nanocomposite in the presence of a strong lateral uniform electrostatic field. It is shown that, under the influence of an external field, the position of the chemical potential of the electron-hole subsystem at absolute zero shifts to the bottom of the conduction band of the sample. The displacement value is determined by the intensity of the external field and increases linearly with increasing field. The concentration, internal energy, and heat capacity of the electronic subsystem of the β-HgS layer in the presence of a field are compared with similar values in the absence of a field. Calculations show that under identical conditions, the presence of an external field leads to an increase in the carrier concentration, which in turn leads to an increase in the internal energy and heat capacity of the system of electrons and holes in the layer.","PeriodicalId":7271,"journal":{"name":"Advanced Materials Research","volume":"19 1","pages":"113 - 128"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of the Lateral Electrostatic Field on the Statistical Distribution of Charge Carriers in a Cylindrical Nanolayer of β-HgS\",\"authors\":\"V. Harutyunyan\",\"doi\":\"10.4028/p-cvCm7E\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Analytical expressions are obtained for the wave functions and the energy spectrum of charge carriers in the β-HgS nanolayer of a cylindrical core/shell/shell β-CdS/ β-HgS/ β-CdS nanocomposite in the presence of a strong lateral uniform electrostatic field. It is shown that, under the influence of an external field, the position of the chemical potential of the electron-hole subsystem at absolute zero shifts to the bottom of the conduction band of the sample. The displacement value is determined by the intensity of the external field and increases linearly with increasing field. The concentration, internal energy, and heat capacity of the electronic subsystem of the β-HgS layer in the presence of a field are compared with similar values in the absence of a field. Calculations show that under identical conditions, the presence of an external field leads to an increase in the carrier concentration, which in turn leads to an increase in the internal energy and heat capacity of the system of electrons and holes in the layer.\",\"PeriodicalId\":7271,\"journal\":{\"name\":\"Advanced Materials Research\",\"volume\":\"19 1\",\"pages\":\"113 - 128\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4028/p-cvCm7E\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4028/p-cvCm7E","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of the Lateral Electrostatic Field on the Statistical Distribution of Charge Carriers in a Cylindrical Nanolayer of β-HgS
Analytical expressions are obtained for the wave functions and the energy spectrum of charge carriers in the β-HgS nanolayer of a cylindrical core/shell/shell β-CdS/ β-HgS/ β-CdS nanocomposite in the presence of a strong lateral uniform electrostatic field. It is shown that, under the influence of an external field, the position of the chemical potential of the electron-hole subsystem at absolute zero shifts to the bottom of the conduction band of the sample. The displacement value is determined by the intensity of the external field and increases linearly with increasing field. The concentration, internal energy, and heat capacity of the electronic subsystem of the β-HgS layer in the presence of a field are compared with similar values in the absence of a field. Calculations show that under identical conditions, the presence of an external field leads to an increase in the carrier concentration, which in turn leads to an increase in the internal energy and heat capacity of the system of electrons and holes in the layer.