横向静电场对β-HgS圆柱形纳米层载流子统计分布的影响

V. Harutyunyan
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引用次数: 0

摘要

得到了在强横向均匀静电场作用下圆柱形核/壳/壳β-CdS/ β-HgS/ β-CdS纳米复合材料β-HgS纳米层中载流子的波函数和能谱的解析表达式。结果表明,在外场作用下,电子空穴子系统在绝对零度的化学势位置向样品导带的底部移动。位移值由外场强度决定,并随场强的增大而线性增大。比较了有场存在时β-HgS层电子分系统的浓度、内能和热容与无场存在时的相似值。计算表明,在相同条件下,外场的存在导致载流子浓度的增加,载流子浓度的增加反过来又导致层中电子和空穴系统的内能和热容的增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of the Lateral Electrostatic Field on the Statistical Distribution of Charge Carriers in a Cylindrical Nanolayer of β-HgS
Analytical expressions are obtained for the wave functions and the energy spectrum of charge carriers in the β-HgS nanolayer of a cylindrical core/shell/shell β-CdS/ β-HgS/ β-CdS nanocomposite in the presence of a strong lateral uniform electrostatic field. It is shown that, under the influence of an external field, the position of the chemical potential of the electron-hole subsystem at absolute zero shifts to the bottom of the conduction band of the sample. The displacement value is determined by the intensity of the external field and increases linearly with increasing field. The concentration, internal energy, and heat capacity of the electronic subsystem of the β-HgS layer in the presence of a field are compared with similar values in the absence of a field. Calculations show that under identical conditions, the presence of an external field leads to an increase in the carrier concentration, which in turn leads to an increase in the internal energy and heat capacity of the system of electrons and holes in the layer.
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