Dielectric Dependent Absorption Characteristics in CNFET Infrared Phototransistor

In future infrared photodetectors, single-walled carbon nanotubes (SWCNTs) are considered as potential candidates due to their band gap, high absorption coefficient (104 - 105 cm −1), high charge carrier mobility and ease of processability. The SWCNT based Field Effect Transistors (CNFETs) are being seriously considered for applications in optoelectronics. In the proposed work optically controlled back gated CNFET is modeled in Sentaurus TCAD to observe the impact of high dielectric oxides on its photoabsorption. The model is based on analytical approximations and parameters extracted from quantum mechanical simulations of the device and depending on the nanotube diameter and the different gate oxide materials. A small deviation in SWCNT chirality shows significant change (more than 50 %) in channel current. Transfer characteristics of the device are analyzed under dark and illuminated conditions. CNFET integrated with HfO2 dielectrics exhibits superior performance with a significant rise in photocurrent current. Precise two dimensional TCAD simulation results and visual figures affirm that the ON state performance of CNFET has significant dependency on the dielectric strength as well as width of the gate oxide and its application in enhancing the performance of carbon nanotube based infrared photo detectors.