1.35 μ m InGaAs/ ingaasp -分离约束-多量子阱结构的激光特性

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147333

M. Mohrle, D. Grutzmacher, M. Rosenzweig, H. Duser

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摘要

给出了1.35 μ m InGaAs/InGaAsP MQW分离约束激光结构的阈值电流密度测量结果。结果表明，障壁厚度在10 ~ 15 nm之间时，阈值电流密度最小。所研究结构的外推阈值电流密度在780和1120 A-cm/sup -2/之间变化。取决于井的数量。激光结构的特征温度T/sub /约为60 k。

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Laser properties of 1.35 mu m InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures

Measurements of the threshold current densities of 1.35 mu m InGaAs/InGaAsP MQW separate-confinement laser structures are presented. It is shown that the lowest values for the threshold current density can be obtained with barrier thicknesses between 10 and 15 nm. The extrapolated threshold current densities of the investigated structures varied between 780 and 1120 A-cm/sup -2/. depending on the number of wells. The characteristic temperature T/sub 0/ of the laser structures was about 60 K.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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