C. Schmidt, O. Schubert, F. Junginger, S. Mahrlein, B. Mayer, A. Sell, R. Huber, A. Leitenstorfer
{"title":"在4 MV/cm的太赫兹场中偏置InP的带间跃迁","authors":"C. Schmidt, O. Schubert, F. Junginger, S. Mahrlein, B. Mayer, A. Sell, R. Huber, A. Leitenstorfer","doi":"10.1109/CLEOE.2011.5943525","DOIUrl":null,"url":null,"abstract":"The influence of strong electric fields on electronic properties of semiconductors is of particular interest both for fundamental science and applications in high speed electronics. Investigations using large quasi-static [1] and THz [2] fields have been performed. However, the accessible field amplitudes have been limited to values typically below 1 MV/cm due to the dielectric breakdown under stationary bias and the availability of intense phase-stable THz sources, respectively.","PeriodicalId":6331,"journal":{"name":"2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)","volume":"9 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Interband transitions in InP biased with THz fields of 4 MV/cm\",\"authors\":\"C. Schmidt, O. Schubert, F. Junginger, S. Mahrlein, B. Mayer, A. Sell, R. Huber, A. Leitenstorfer\",\"doi\":\"10.1109/CLEOE.2011.5943525\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of strong electric fields on electronic properties of semiconductors is of particular interest both for fundamental science and applications in high speed electronics. Investigations using large quasi-static [1] and THz [2] fields have been performed. However, the accessible field amplitudes have been limited to values typically below 1 MV/cm due to the dielectric breakdown under stationary bias and the availability of intense phase-stable THz sources, respectively.\",\"PeriodicalId\":6331,\"journal\":{\"name\":\"2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)\",\"volume\":\"9 1\",\"pages\":\"1-1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOE.2011.5943525\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOE.2011.5943525","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interband transitions in InP biased with THz fields of 4 MV/cm
The influence of strong electric fields on electronic properties of semiconductors is of particular interest both for fundamental science and applications in high speed electronics. Investigations using large quasi-static [1] and THz [2] fields have been performed. However, the accessible field amplitudes have been limited to values typically below 1 MV/cm due to the dielectric breakdown under stationary bias and the availability of intense phase-stable THz sources, respectively.
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