电子束检测对FEOL过程集成的研究与发现

Fengjia Pan, Hungling Chen, Yin Long, Kai Wang, Hao Guo
{"title":"电子束检测对FEOL过程集成的研究与发现","authors":"Fengjia Pan, Hungling Chen, Yin Long, Kai Wang, Hao Guo","doi":"10.1109/CSTIC49141.2020.9282435","DOIUrl":null,"url":null,"abstract":"A novel inspection method is proposed for checking the integration of FEOL (front-end-of-line) device fabrication. As the designed electron-beam (as e-beam in the following text) inspection methodology applies to the last step of FEOL device and prior to MEOL interconnection fabrication, the capability of both voltage contrast and physical feature detection discovered the surface and underneath defects in the very narrow space of Nickel Silicide formation. Experiments showed the variation of multiplex parameters involving poly critical dimension, spacer and SMT film thickness with dry, wet, furnace and plasma ashing processes would lead to invisible change of Nickel Silicide formation and can be detected by the designed inspection. Defect count would be high while those majority pre-steps process windows being marginal. After all, the cumulative effect would lead to electrical failures of the device.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"19 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation and Discovery of the Integration of FEOL Process by Electron Beam Inspections\",\"authors\":\"Fengjia Pan, Hungling Chen, Yin Long, Kai Wang, Hao Guo\",\"doi\":\"10.1109/CSTIC49141.2020.9282435\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel inspection method is proposed for checking the integration of FEOL (front-end-of-line) device fabrication. As the designed electron-beam (as e-beam in the following text) inspection methodology applies to the last step of FEOL device and prior to MEOL interconnection fabrication, the capability of both voltage contrast and physical feature detection discovered the surface and underneath defects in the very narrow space of Nickel Silicide formation. Experiments showed the variation of multiplex parameters involving poly critical dimension, spacer and SMT film thickness with dry, wet, furnace and plasma ashing processes would lead to invisible change of Nickel Silicide formation and can be detected by the designed inspection. Defect count would be high while those majority pre-steps process windows being marginal. After all, the cumulative effect would lead to electrical failures of the device.\",\"PeriodicalId\":6848,\"journal\":{\"name\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"19 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC49141.2020.9282435\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种检测前端器件制造集成度的新方法。由于所设计的电子束(下文称为电子束)检测方法适用于FEOL器件的最后一步和MEOL互连制造之前,电压对比和物理特征检测的能力可以在非常狭窄的硅化镍形成空间中发现表面和下面的缺陷。实验表明,干法、湿法、炉灰化和等离子体灰化过程中多临界尺寸、间隔层和SMT膜厚度等多重参数的变化会导致硅化镍形成的不可见变化,并且可以通过设计的检测方法检测到。缺陷数将会很高,而那些多数预步骤过程窗口是边缘的。毕竟,累积效应会导致设备的电气故障。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation and Discovery of the Integration of FEOL Process by Electron Beam Inspections
A novel inspection method is proposed for checking the integration of FEOL (front-end-of-line) device fabrication. As the designed electron-beam (as e-beam in the following text) inspection methodology applies to the last step of FEOL device and prior to MEOL interconnection fabrication, the capability of both voltage contrast and physical feature detection discovered the surface and underneath defects in the very narrow space of Nickel Silicide formation. Experiments showed the variation of multiplex parameters involving poly critical dimension, spacer and SMT film thickness with dry, wet, furnace and plasma ashing processes would lead to invisible change of Nickel Silicide formation and can be detected by the designed inspection. Defect count would be high while those majority pre-steps process windows being marginal. After all, the cumulative effect would lead to electrical failures of the device.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信