用激光太赫兹发射显微镜非接触测量零偏置电压的MOSFET

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2004-12-01 DOI:10.1109/ICIMW.2004.1422190

M. Yamashita, T. Kiwa, M. Tonouchi, K. Nikawa, C. Otani, K. Kawase

{"title":"用激光太赫兹发射显微镜非接触测量零偏置电压的MOSFET","authors":"M. Yamashita, T. Kiwa, M. Tonouchi, K. Nikawa, C. Otani, K. Kawase","doi":"10.1109/ICIMW.2004.1422190","DOIUrl":null,"url":null,"abstract":"For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.","PeriodicalId":13627,"journal":{"name":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","volume":"54 1","pages":"515-516"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Non-contact measurement of MOSFET with zero bias voltage using the laser-THz emission microscope\",\"authors\":\"M. Yamashita, T. Kiwa, M. Tonouchi, K. Nikawa, C. Otani, K. Kawase\",\"doi\":\"10.1109/ICIMW.2004.1422190\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.\",\"PeriodicalId\":13627,\"journal\":{\"name\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"volume\":\"54 1\",\"pages\":\"515-516\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIMW.2004.1422190\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2004.1422190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

为了检测大规模集成电路(LSI)的电气故障，我们研制了激光太赫兹发射显微镜(LTEM)，该显微镜记录了样品在激光脉冲激励下的太赫兹发射幅值图。我们成功地观察了零偏置电压下嵌入在测试元件组中的mosfet的太赫兹发射图像。这一结果表明，LTEM不仅可以用于大规模集成电路失效分析中的缺陷定位，还可以用于在线检测和监控。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Non-contact measurement of MOSFET with zero bias voltage using the laser-THz emission microscope

For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

自引率

0.00%

发文量