Effect of Ion Bombardment and Deposition Temperature on Intrinsic Stress and Growth Rate of DLC

Within the framework of the model of the nonlocal thermoelastic peak of the low-energy ion, the formation of intrinsic stress in the DLC deposited from the flow of $C^{+}$ ions of the filtered vacuum arc plasma is theoretically investigated. The dependence of intrinsic stress on the bias potential is determined at different deposition temperatures for the cases of constant and pulse potentials. It is shown that in both cases considered, the stresses decrease with the increase in the deposition temperature. The influence of the filling parameter in the mode of pulse potential on the behavior of intrinsic stresses at different bias potentials is investigated. The results of calculation the sputtering coefficients of the DLC depending on the potential at different angles of incidence of ions are presented. The influence of the sputtering process on the growth rate of DLC in the cases of DC-mode and mode of pulse potential is analyzed.