后处理对含锌化合物缓冲层CIGS太阳能电池性能的影响

T. Nakada, Taizou Kobayashi, T. Kumazawa, H. Yamaguchi
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引用次数: 2

摘要

研究了氨冲洗、光浸泡和热光浸泡等沉积后处理对Cu(In,Ga)Se2 (CIGS)太阳能电池性能的影响。讨论了这些处理对透明导电氧化物(TCO)/缓冲液/CIGS界面的能带对准的影响。研究了三种溅射沉积ZnO的CIGS太阳能电池:Al/CBD-ZnS(O,OH)、MOCVD-ZnO:B/CBD-ZnS(O,OH)和MOCVD-ZnO:B/ALD-Zn(O,S)。讨论了缓冲/TCO材料与沉积工艺相结合的重要性。我们证明了在缓冲层/CIGS界面处调整与能带对准相关的S/(S+O)原子比对于实现具有锌化合物缓冲层的高效CIGS太阳能电池至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impacts of post-treatments on cell performance of CIGS solar cells with Zn-compound buffer layers
Thepostdeposition treatments, such as ammonia rinsing, light soaking, and heat light soaking on cell performances of Cu(In,Ga)Se2 (CIGS) solar cells with Zn-compound buffer layers, are investigated. The impacts of these treatments are discussed in connection with the band alignment at the transparent conducting oxide (TCO)/buffer/CIGS interface. Three types of CIGS solar cells with sputter-deposited ZnO:Al/CBD-ZnS(O,OH), MOCVD-ZnO:B/CBD-ZnS(O,OH), and MOCVD-ZnO:B/ALD-Zn(O,S) are investigated in this paper. The importance of the combination of buffer/TCO materials and deposition processes is discussed. We demonstrate that the adjustment of an S/(S+O) atomic ratio relevant to the band alignment at the buffer/CIGS interface is critical to achieve high-efficiency CIGS solar cells with Zn-compound buffer layer.
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