半导体微腔中自发发射动力学控制

B. Gayral
{"title":"半导体微腔中自发发射动力学控制","authors":"B. Gayral","doi":"10.1051/ANPHYS:200102001","DOIUrl":null,"url":null,"abstract":"Spontaneous emission of light can be controlled, cavity quantum electrodynamics tells us, and many experiments in atomic physics demonstrated this fact. In particular, coupling an emitter to a resonant photon mode of a cavity can enhance its spontaneous emission rate: this is the so-called Purcell effect. Though appealing it might seem to implement these concepts for the benefit of light-emitting semiconductor devices, great care has to be taken as to which emitter/cavity system should be used. Semiconductor quantum boxes prove to be good candidates for witnessing the Purcell effect. Also, low volume cavities having a high optical quality – in other words a long photon storage time – are required. State-of-the-art fabrication techniques of such cavities are presented and discussed.\u2029We demonstrate spontaneous emission rate enhancement for InAs/GaAs quantum boxes in time-resolved and continuous-wave photoluminescence experiments. This is done for two kinds of cavities, namely GaAs/AlAs micropillars (global enhancement by a factor of 5), and GaAs microdisks (global enhancement by a factor of 20). Prospects for lasers, light-emitting diodes and single photon sources based on the Purcell effect are discussed.","PeriodicalId":50779,"journal":{"name":"Annales De Physique","volume":"125 1","pages":"1-135"},"PeriodicalIF":0.0000,"publicationDate":"2001-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Controlling spontaneous emission dynamics in semiconductor microcavities\",\"authors\":\"B. Gayral\",\"doi\":\"10.1051/ANPHYS:200102001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Spontaneous emission of light can be controlled, cavity quantum electrodynamics tells us, and many experiments in atomic physics demonstrated this fact. In particular, coupling an emitter to a resonant photon mode of a cavity can enhance its spontaneous emission rate: this is the so-called Purcell effect. Though appealing it might seem to implement these concepts for the benefit of light-emitting semiconductor devices, great care has to be taken as to which emitter/cavity system should be used. Semiconductor quantum boxes prove to be good candidates for witnessing the Purcell effect. Also, low volume cavities having a high optical quality – in other words a long photon storage time – are required. State-of-the-art fabrication techniques of such cavities are presented and discussed.\\u2029We demonstrate spontaneous emission rate enhancement for InAs/GaAs quantum boxes in time-resolved and continuous-wave photoluminescence experiments. This is done for two kinds of cavities, namely GaAs/AlAs micropillars (global enhancement by a factor of 5), and GaAs microdisks (global enhancement by a factor of 20). Prospects for lasers, light-emitting diodes and single photon sources based on the Purcell effect are discussed.\",\"PeriodicalId\":50779,\"journal\":{\"name\":\"Annales De Physique\",\"volume\":\"125 1\",\"pages\":\"1-135\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Annales De Physique\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/ANPHYS:200102001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Annales De Physique","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/ANPHYS:200102001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

摘要

光的自发发射是可以控制的,空腔量子电动力学告诉我们,原子物理学中的许多实验证明了这一事实。特别地,耦合一个发射极到谐振光子模式的一个腔可以提高其自发发射率:这就是所谓的珀塞尔效应。虽然为了发光半导体器件的利益,实现这些概念似乎很吸引人,但必须非常小心地考虑应该使用哪个发射极/腔系统。半导体量子盒被证明是见证珀塞尔效应的良好候选者。此外,需要具有高光学质量的小体积腔,换句话说,需要长时间的光子存储时间。介绍和讨论了这种空腔的最新制造技术。
我们在时间分辨和连续波光致发光实验中证明了InAs/GaAs量子盒的自发发射速率增强。这适用于两种空腔,即GaAs/AlAs微柱(全局增强系数为5)和GaAs微盘(全局增强系数为20)。讨论了基于珀塞尔效应的激光器、发光二极管和单光子源的发展前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Controlling spontaneous emission dynamics in semiconductor microcavities
Spontaneous emission of light can be controlled, cavity quantum electrodynamics tells us, and many experiments in atomic physics demonstrated this fact. In particular, coupling an emitter to a resonant photon mode of a cavity can enhance its spontaneous emission rate: this is the so-called Purcell effect. Though appealing it might seem to implement these concepts for the benefit of light-emitting semiconductor devices, great care has to be taken as to which emitter/cavity system should be used. Semiconductor quantum boxes prove to be good candidates for witnessing the Purcell effect. Also, low volume cavities having a high optical quality – in other words a long photon storage time – are required. State-of-the-art fabrication techniques of such cavities are presented and discussed.
We demonstrate spontaneous emission rate enhancement for InAs/GaAs quantum boxes in time-resolved and continuous-wave photoluminescence experiments. This is done for two kinds of cavities, namely GaAs/AlAs micropillars (global enhancement by a factor of 5), and GaAs microdisks (global enhancement by a factor of 20). Prospects for lasers, light-emitting diodes and single photon sources based on the Purcell effect are discussed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Annales De Physique
Annales De Physique 物理-物理:综合
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信