面包覆1.3 μ m InGaAsP/InP MQW激光器的性能

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147334

C. P. Seltzer, M. Bagley, G. Sherlock, D. Elton, S. Perrin, D. M. Cooper

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引用次数: 0

摘要

描述了工作在1.3 μ m光纤通信窗口内的多量子阱外腔激光器和光放大器。讨论了器件的设计和制作方法。与传统的批量器件相比，MQW器件提供了增强的特性。在1.255 μ m ~ 1.417 μ m范围内，测量到具有单一面涂层的MQW激光器的调谐范围为160 nm，器件在1.336 μ m处的峰值功率超过40 mW，侧模抑制比超过40 dB。长度为500 μ m的光放大器带宽为110 nm，单通增益为18 dB，饱和输出功率为14 dBm (25 mW)

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Properties of facet-coated 1.3 mu m InGaAsP/InP MQW lasers

Multiple quantum well (MQW) external cavity lasers and optical amplifiers operating in the 1.3 mu m optical fiber communications window are described. The device designs and fabrications are discussed. It is demonstrated that MQW devices offer enhanced characteristics when compared with conventional bulk devices. An MQW laser with a single facet coat in an external cavity was measured to have a tuning range of 160 nm from 1.255 mu m to 1.417 mu m. The device had a peak power of over 40 mW at 1.336 mu m, and a side mode suppression ratio of more than 40 dB. An optical amplifier with a length of 500 mu m had a bandwidth of 110 nm, a 18 dB single-pass gain, and saturated output power of 14 dBm (25 mW).<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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