脉冲激光沉积法生长硫系铅薄膜

2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP) Pub Date : 2017-09-01 DOI:10.1109/NAP.2017.8190232

Y. Tur, E. Lusakowska, G. Luka, P. Potera, I. Virt

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引用次数: 0

摘要

采用脉冲激光沉积法制备了三种结构优良的硫系铅薄膜:PbTe、PbSe和PbS。薄膜生长在单晶衬底(Si, KCl, Al2O3)和覆盖有Si3N4缓冲层的Si上。Si3N4层在初始生长阶段促进了硫系铅层的成核，使其表面形貌更均匀，表面粗糙度更低。用功率谱密度分析方法研究了在Si3N4上生长的薄膜的表面几何形状(粗糙度)。

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Lead chalcogenide films grown by pulsed laser deposition

Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition. The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis.

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2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)

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