{"title":"三结GaInP/GaAs/Ge太阳能电池的数值模拟，以提供对高浓度填充因子损失的见解","authors":"A. Kanevce, J. Olson, W. Metzger","doi":"10.1109/PVSC.2010.5616586","DOIUrl":null,"url":null,"abstract":"We have modeled a Ga0.5In0.5P/GaAs/Ge triple junction solar cell, including two Esaki diodes, to analyze how performance changes with illumination intensity. As has been observed experimentally, fill factor (FF) is the primary aspect of performance that limits efficiency at high concentration levels. The FF decreases because of series resistance and barriers created by the GaAs/GaInP back surface field. By adjusting carrier concentration or the material associated with the back surface field (BSF) and the carrier concentration in the absorber, FF losses can be reduced and efficiency enhanced at high concentration levels.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"002066-002069"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Numerical simulations of triple-junction GaInP/GaAs/Ge solar cells to provide insight into fill-factor losses at high concentration\",\"authors\":\"A. Kanevce, J. Olson, W. Metzger\",\"doi\":\"10.1109/PVSC.2010.5616586\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have modeled a Ga0.5In0.5P/GaAs/Ge triple junction solar cell, including two Esaki diodes, to analyze how performance changes with illumination intensity. As has been observed experimentally, fill factor (FF) is the primary aspect of performance that limits efficiency at high concentration levels. The FF decreases because of series resistance and barriers created by the GaAs/GaInP back surface field. By adjusting carrier concentration or the material associated with the back surface field (BSF) and the carrier concentration in the absorber, FF losses can be reduced and efficiency enhanced at high concentration levels.\",\"PeriodicalId\":6424,\"journal\":{\"name\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"volume\":\"1 1\",\"pages\":\"002066-002069\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 35th IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2010.5616586\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 35th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2010.5616586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical simulations of triple-junction GaInP/GaAs/Ge solar cells to provide insight into fill-factor losses at high concentration
We have modeled a Ga0.5In0.5P/GaAs/Ge triple junction solar cell, including two Esaki diodes, to analyze how performance changes with illumination intensity. As has been observed experimentally, fill factor (FF) is the primary aspect of performance that limits efficiency at high concentration levels. The FF decreases because of series resistance and barriers created by the GaAs/GaInP back surface field. By adjusting carrier concentration or the material associated with the back surface field (BSF) and the carrier concentration in the absorber, FF losses can be reduced and efficiency enhanced at high concentration levels.
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