确定低功值传感器的等效电路参数

W. Marshall, G. Brigham
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引用次数: 16

摘要

提出了一种利用复杂导纳数据求换能器等效电路参数的新解析方法。新方法处理低值传感器(那些具有弱耦合和/或低Qm的传感器),但不需要相量减法或类似的导纳回路几何操作。通过简单分析电容曲线B(ω)/ω可得到无载单自由度等效电路的4个参数,通过耗散曲线G(ω)/B(ω)可得到一个附加参数。该技术简化了开发传感器的评估,特别是那些使用边缘或弱极化材料的传感器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Determining equivalent circuit parameters for low figure of merit transducers
A new analytical technique for deriving transducer equivalent circuit parameters from complex electrical admittance data is presented. The new method handles low figure of merit transducers (those having weak coupling and/or low Qm), but does not require phasor subtraction or similar geometrical manipulations of the admittance loop. Four parameters of the unloaded, single degree-of-freedom equivalent circuit are extracted from a simple analysis of the capacitance curve, B(ω)/ω, and one additional parameter is obtained from the dissipation curve, G(ω)/B(ω). This technique simplifies the evaluation of developmental transducers, particularly those using marginal or weakly polarized materials.
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