小规模生产4cm /sup 2/ ITO/InP光伏太阳能电池

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147287

T. Gessert, X. Li, T. Coutts, P. W. Phelps, N. Tzafaras

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引用次数: 1

摘要

描述了一个项目的程序和结果，该项目使用用于形成小面积氧化铟锡(ITO)/InP太阳能电池的溅射工艺生产大面积(4厘米/sup 2/)电池。虽然只制造了少量的4-cm/sup 2/ ITO/InP细胞(总共约10个细胞)，但最佳细胞的效率与通过封闭安瓿扩散过程制造的约1300个2-cm/sup 2/细胞的最大产量的最佳结果相比是有利的。测定的电池平均效率为15.5%，标准差为0.35%。获得的最高电池性能为16.1% AM0 (SERI测量)。初步的暗I-V数据分析表明，电池具有接近理想的特性，二极管理想系数和反饱和电流密度分别为1.02和1.1 *10/sup -12/ mAcm/sup -2/

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Small-scale production of 4-cm/sup 2/ ITO/InP photovoltaic solar cells

The procedures and results of a project that produced large-area (4-cm/sup 2/) cells using the sputtering process used to form small-area indium tin oxide (ITO)/InP solar cells are described. Although only a small number of the 4-cm/sup 2/ ITO/InP cells (approximately 10 cells total) were fabricated, the efficiency of the best cell compares favorably with the best result reported from a larger production of approximately 1300 2-cm/sup 2/ cells in which the junction was fabricated through a closed-ampoule diffusion process. The average cell efficiency is determined to be 15.5%, with a standard deviation of 0.35%. The highest cell performance obtained is 16.1% AM0 (SERI measurement). Preliminary dark I-V data analysis indicates that the cells demonstrate near-ideal characteristics, with a diode-ideality factor and reverse-saturation current density of 1.02 and 1.1 *10/sup -12/ mAcm/sup -2/, respectively.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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