基于两阶段NBTI模型的NBTI降解状态动力学研究

A. F. Muhammad Alimin, S. F. Wan Muhamad Hatta, N. Soin
{"title":"基于两阶段NBTI模型的NBTI降解状态动力学研究","authors":"A. F. Muhammad Alimin, S. F. Wan Muhamad Hatta, N. Soin","doi":"10.1109/RSM.2015.7354992","DOIUrl":null,"url":null,"abstract":"This paper presents a simulation framework for reliability analysis of PMOS devices in the TCAD Sentaurus environment. The degradation of parameter is based on the numerical solution for the two-stage NBTI model mechanism. We demonstrate and analyze the voltage degradation, Vth of a high-k HfO2 dielectric pMOSFET structure with effective oxide thickness (EOT) of 1.092 nm. After 1000s of stress, the threshold voltage shift of higher stress bias shows higher degradation (~0.07V) compared to the lower stress bias (~0.008V).","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"16 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A study of the states kinetics in NBTI degradation by two-stage NBTI model implementation\",\"authors\":\"A. F. Muhammad Alimin, S. F. Wan Muhamad Hatta, N. Soin\",\"doi\":\"10.1109/RSM.2015.7354992\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a simulation framework for reliability analysis of PMOS devices in the TCAD Sentaurus environment. The degradation of parameter is based on the numerical solution for the two-stage NBTI model mechanism. We demonstrate and analyze the voltage degradation, Vth of a high-k HfO2 dielectric pMOSFET structure with effective oxide thickness (EOT) of 1.092 nm. After 1000s of stress, the threshold voltage shift of higher stress bias shows higher degradation (~0.07V) compared to the lower stress bias (~0.008V).\",\"PeriodicalId\":6667,\"journal\":{\"name\":\"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"volume\":\"16 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSM.2015.7354992\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2015.7354992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种用于TCAD Sentaurus环境下PMOS器件可靠性分析的仿真框架。参数退化是基于两阶段NBTI模型机构的数值解。我们演示并分析了一个有效氧化厚度(EOT)为1.092 nm的高k HfO2介电pMOSFET结构的电压退化Vth。在1000s的应力作用下,高应力偏置的阈值电压位移比低应力偏置(~0.008V)表现出更高的退化(~0.07V)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A study of the states kinetics in NBTI degradation by two-stage NBTI model implementation
This paper presents a simulation framework for reliability analysis of PMOS devices in the TCAD Sentaurus environment. The degradation of parameter is based on the numerical solution for the two-stage NBTI model mechanism. We demonstrate and analyze the voltage degradation, Vth of a high-k HfO2 dielectric pMOSFET structure with effective oxide thickness (EOT) of 1.092 nm. After 1000s of stress, the threshold voltage shift of higher stress bias shows higher degradation (~0.07V) compared to the lower stress bias (~0.008V).
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