Cu(In,Ga)Se2太阳能电池前表面具有接触开口的多层Al2O3/HfO2设计

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI:10.1109/PVSC43889.2021.9518838

D. Buldu, J. de Wild, T. Kohl, G. Birant, G. Brammertz, M. Meuris, J. Poortmans, B. Vermang

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引用次数: 0

摘要

研究了一种具有接触开口的Cu(In,Ga)Se2薄膜太阳能电池前表面多层叠加的新方法。在这种多层设计中，使用薄的HfOx层来保护较厚的AlOx层免受化学浴沉积中氨的影响。接触孔是用碱溶液形成的。通过在CIGS/缓冲层接口之间实现多层钝化层，改善了寿命衰减。结果表明，该方法可使开路电压提高30mV。

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A multi-stack Al2O3/HfO2 design with contact openings for front surface of Cu(In,Ga)Se2 solar cells

A new multi-stack approach with contact openings was investigated for front surface of Cu(In,Ga)Se2 thin film solar cells. In this multi-stack design, a thin HfOx layer was used to protect a thicker AlOx layer from the presence of ammonia in the chemical bath deposition. The contact openings were created by using alkali solution. The lifetime decay was improved by implementing multi-stack passivation layer between CIGS/buffer layer interface. It was shown that open circuit voltage was increased by up to 30mV.

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2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)

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