{"title":"Si MPS与CIBH结构的快速恢复应用","authors":"Hongming Ma, Yan Wang","doi":"10.1109/ICICDT51558.2021.9626467","DOIUrl":null,"url":null,"abstract":"In this paper, a new fast recovery diode concept realizing low reverse recovery time, high dynamic ruggedness and good trade-off between dynamic and static characteristics is proposed. Controlled injection of backside holes (CIBH) structure is implemented at the cathode of merged PIN/Schottky (MPS) diode, which can reduce the cathode injection efficiency during on-state and suppress the fast extraction of carriers during reverse recovery process. Through Sentaurus TCAD simulation, the proposed structure achieved a reverse recovery time of 36ns and a reverse recovery peak current density of 325.2A/cm2 at the reverse voltage of 200V and the forward current density of 100A/cm2, which is improved by 42.9% and 35.7% compared with the MPS diode. Moreover, in oscillation test, the oscillation time and voltage amplitude are optimized by 50% and 37.3% respectively compared with MPS diode.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"8 2 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Si MPS with CIBH Structure for Fast Recovery Applications\",\"authors\":\"Hongming Ma, Yan Wang\",\"doi\":\"10.1109/ICICDT51558.2021.9626467\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new fast recovery diode concept realizing low reverse recovery time, high dynamic ruggedness and good trade-off between dynamic and static characteristics is proposed. Controlled injection of backside holes (CIBH) structure is implemented at the cathode of merged PIN/Schottky (MPS) diode, which can reduce the cathode injection efficiency during on-state and suppress the fast extraction of carriers during reverse recovery process. Through Sentaurus TCAD simulation, the proposed structure achieved a reverse recovery time of 36ns and a reverse recovery peak current density of 325.2A/cm2 at the reverse voltage of 200V and the forward current density of 100A/cm2, which is improved by 42.9% and 35.7% compared with the MPS diode. Moreover, in oscillation test, the oscillation time and voltage amplitude are optimized by 50% and 37.3% respectively compared with MPS diode.\",\"PeriodicalId\":6737,\"journal\":{\"name\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"volume\":\"8 2 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on IC Design and Technology (ICICDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT51558.2021.9626467\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on IC Design and Technology (ICICDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT51558.2021.9626467","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Si MPS with CIBH Structure for Fast Recovery Applications
In this paper, a new fast recovery diode concept realizing low reverse recovery time, high dynamic ruggedness and good trade-off between dynamic and static characteristics is proposed. Controlled injection of backside holes (CIBH) structure is implemented at the cathode of merged PIN/Schottky (MPS) diode, which can reduce the cathode injection efficiency during on-state and suppress the fast extraction of carriers during reverse recovery process. Through Sentaurus TCAD simulation, the proposed structure achieved a reverse recovery time of 36ns and a reverse recovery peak current density of 325.2A/cm2 at the reverse voltage of 200V and the forward current density of 100A/cm2, which is improved by 42.9% and 35.7% compared with the MPS diode. Moreover, in oscillation test, the oscillation time and voltage amplitude are optimized by 50% and 37.3% respectively compared with MPS diode.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
