高声学指数对比声子电路:数值模拟

Wance Wang, Mohan Shen, Chang-ling Zou, Wei Fu, Zhen Shen, H. Tang
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引用次数: 13

摘要

我们对声子集成电路的关键构件进行了数值模拟,使声子能够在高声折射率波导中路由。我们特别关注的是蓝宝石上的氮化镓声子平台,该平台最近在其顶层展示了高声学限制,而无需使用悬浮结构。我们首先系统地模拟了在亚波长截面的带状波导和环形谐振器中支持的各种横向声子模式。从几何参数的角度对声子模的模约束和质量因子进行了数值研究。在优化的环形谐振器中,预测质量因子高达$10^{8}$。接下来,我们将研究声子定向耦合器的设计,并给出在平行波导中传播的模式之间实现强倏逝耦合的关键设计参数。最后,对环形谐振器的直接激励和微波输入与声子耗散的临界耦合进行了交叉换能器电极的仿真。我们的工作提供了高声学指数声子电路中声子模式和功能声子成分的全面数值表征,补充了先前的理论,并有助于新兴的声子集成电路领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-acoustic-index-contrast phononic circuits: Numerical modeling
We numerically model key building blocks of a phononic integrated circuit that enable phonon routing in high-acoustic-index waveguides. Our particular focus is on Gallium Nitride-on-sapphire phononic platform which has recently demonstrated high acoustic confinement in its top layer without the use of suspended structures. We start with systematic simulation of various transverse phonon modes supported in strip waveguides and ring resonators with sub-wavelength cross-section. Mode confinement and quality factors of phonon modes are numerically investigated with respect to geometric parameters. Quality factor up to $10^{8}$ is predicted in optimized ring resonators. We next study the design of the phononic directional couplers, and present key design parameters for achieving strong evanescent couplings between modes propagating in parallel waveguides. Last, interdigitated transducer electrodes are included in the simulation for direct excitation of a ring resonator and critical coupling between microwave input and phononic dissipation. Our work provides comprehensive numerical characterization of phonon modes and functional phononic components in high-acoustic-index phononic circuits, which supplements previous theories and contributes to the emerging field of phononic integrated circuits.
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