方形Cu2ZnSnS4半导体的弹性常数:AB-Initio计算

L. Boutahar, A. Benamrani, Z. Er, N. Bioud, Z. Rouabah
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引用次数: 3

摘要

摘要本文采用从头算方法研究了方形Cu2ZnSnS4 (CZTS)四元半导体块体材料在Kesterite (KS)和Stannite (ST)相中的弹性常数和其他力学和热参数。计算中使用了超软伪势(USPP)中的量子浓缩码和局部密度近似(LDA)方法。首先,从弹性刚度常数Cij、法向各向异性因子和剪切各向异性因子的预测开始研究。然后给出了其他力学模量,特别是各向同性体积模量B、剪切模量G、杨氏模量E、泊松比ν和Pugh准则G/B。平衡状态下的力学稳定性判据分析表明,CZTS材料的弹性刚度常数Cij满足所有稳定条件。此外,还计算了CZTS半导体的维氏硬度HV、声速、德拜温度θD和熔化温度Tm等参数。所得的弹性常数Cij及其他力学和热参数值与实验和其他文献的理论结果吻合较好。KS相的德拜温度θD约为332.7 K,锡相的德拜温度θD约为329.1 K。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Elastic Constants of Tetragonal Cu2ZnSnS4 Semiconductor: AB-Initio Calculation
Abstract In this work, an ab-initio calculation is used to investigate the elastic constants and some other mechanical and thermal parameters of tetragonal Cu2ZnSnS4 (CZTS) quaternary semiconducting bulk material in Kesterite (KS) and Stannite (ST) phases. The Quantum Espresso code within the Ultra Soft pseudo potentials (USPP) and the local density approximation (LDA) approach were used in the calculation. Firstly,, studies are started with the prediction of the elastic stiffness constants Cij and the normal and shear anisotropy factors. Then some other mechanical moduli, especially the isotropic bulk modulus B, the shear modulus G, the Young modulus E, the Poisson’s ratio ν, and the Pugh’s criteria (G/B) are delivered. The analysis of the mechanical stability criteria at equilibrium shows that our elastic stiffness constants Cij of CZTS material obey all the stability conditions. Additionally, some other parameters of the CZTS semiconductor, especially: the Vickers hardness HV, the sound velocity, the Debye temperature θD and the melting temperature Tm were also calculated. The obtained values of the elastic constants Cij and other mechanical and thermal parameters agree well with experimental and other theoretical results of the literature. The Debye temperature θD of the KS phase was found at around 332.7 K, and that of the stannite phase was found equal to 329.1 K, respectively.
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