采用耦合LC槽的低功率17%调谐范围低相位噪声压控振荡器

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117644

M. Nagarajan, Kaixue Ma, K. Yeo, Shouxian Mou, T. B. Kumar

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引用次数: 0

摘要

采用0.18µm SiGe BiCMOS技术，设计了一种工作在k波段、具有大调谐范围和低相位噪声的全集成基频和推推压控振荡器(VCOs)。为了实现宽调谐范围，同时保持低VCO调谐灵敏度(Kvco)，耦合LC罐和数字调谐电容器被使用。该vco实现了17%的频率调谐范围(FTR)，在1.8V电压下具有7 mW的低相位噪声。

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A low power 17% tuning range low phase noise VCOs using coupled LC tanks

A fully integrated fundamental and push-push voltage controlled oscillators (VCOs) working in K-band with a large tuning range and a low phase noise fabricated in a 0.18 µm SiGe BiCMOS technology is presented. To achieve a wide tuning range while maintaining a low VCO tuning sensitivity (Kvco), the coupled LC tanks and digital tuning capacitors are used. The VCOs achieve a frequency tuning range (FTR) of 17% with a low phase noise consuming 7 mW from 1.8V voltage supply.

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来源期刊

2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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