耦合工程薄氮化硅谐振器中宽带克尔梳近可见光谱

A. E. Dorche, A. Eftekhar, A. Adibi
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引用次数: 5

摘要

我们提出了在薄氮化硅(SiN)平台上从650 nm到1200 nm的宽带Kerr-comb生成,该平台使用色散设计的过蚀刻SiN波导和耦合谐振器结构,通过色散波增强功率传输。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wideband Kerr-comb near visible spectrum in coupling-engineered thin Silicon nitride resonators
We present wideband Kerr-comb generation from 650 nm to 1200 nm in a thin silicon-nitride (SiN) platform enabled by enhanced power transfer through the dispersive wave using a dispersion-engineered over-etched SiN waveguide and a coupled-resonator structure.
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