纳米电子学的理论分析与建模

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC) Pub Date : 2015-11-12 DOI:10.1109/ESSDERC.2015.7324700

G. Baccarani, E. Baravelli, E. Gnani, A. Gnudi, S. Reggiani

{"title":"纳米电子学的理论分析与建模","authors":"G. Baccarani, E. Baravelli, E. Gnani, A. Gnudi, S. Reggiani","doi":"10.1109/ESSDERC.2015.7324700","DOIUrl":null,"url":null,"abstract":"In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.","PeriodicalId":11845,"journal":{"name":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Theoretical analyses and modeling for nanoelectronics\",\"authors\":\"G. Baccarani, E. Baravelli, E. Gnani, A. Gnudi, S. Reggiani\",\"doi\":\"10.1109/ESSDERC.2015.7324700\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.\",\"PeriodicalId\":11845,\"journal\":{\"name\":\"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2015.7324700\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2015.7324700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

在本报告中，我们将根据摩尔定律的预测，简要讨论微电子学向纳米电子学的演变，以及与此演变相关的一些问题。接下来，我们解决了与极端器件小型化相关的器件建模要求，例如频带分裂成多个子带和准弹道传输。总结了物理模型，并报道和讨论了几种异质结tfet的仿真结果。

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Theoretical analyses and modeling for nanoelectronics

In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.

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ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)

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