去耦DIMM:使用低速DRAM器件构建高带宽存储系统

Hongzhong Zheng, Jiang Lin, Zhao Zhang, Zhichun Zhu
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引用次数: 61

摘要

多核处理器的广泛应用极大地提高了存储系统对高带宽和大容量的要求。在传统的DDR2/DDR3 DRAM存储系统中,内存总线和DRAM设备以相同的数据速率运行。为了提高内存带宽,我们提出了一种新的内存系统设计,称为去耦DIMM,它允许内存总线以比DRAM设备高得多的数据速率运行。在该设计中,在慢速DRAM设备和快速存储器总线之间添加同步缓冲区来中继数据;并对内存访问调度进行了改进,以避免内存rank上的访问冲突。该设计不仅提高了当前存储设备所能支持的内存带宽,而且通过使用相对较慢的存储设备,提高了可靠性、功率效率和成本效益。解耦的思想,精确地解耦存储器总线和单级设备之间的带宽匹配,也可以应用于包括FB-DIMM在内的其他类型的存储器系统。实验结果表明,总线数据速率为2667MT/s,器件数据速率为1333MT/s的解耦DIMM系统在内存密集型工作负载下的性能比传统的1333MT/s数据速率的内存系统平均提高51%。另外,总线数据速率为1600MT/s,器件数据速率为800MT/s的解耦DIMM系统,与传统的1600MT/s数据速率系统相比,性能损失仅为8%,内存功耗降低16%,内存能耗节省9%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Decoupled DIMM: building high-bandwidth memory system using low-speed DRAM devices
The widespread use of multicore processors has dramatically increased the demands on high bandwidth and large capacity from memory systems. In a conventional DDR2/DDR3 DRAM memory system, the memory bus and DRAM devices run at the same data rate. To improve memory bandwidth, we propose a new memory system design called decoupled DIMM that allows the memory bus to operate at a data rate much higher than that of the DRAM devices. In the design, a synchronization buffer is added to relay data between the slow DRAM devices and the fast memory bus; and memory access scheduling is revised to avoid access conflicts on memory ranks. The design not only improves memory bandwidth beyond what can be supported by current memory devices, but also improves reliability, power efficiency, and cost effectiveness by using relatively slow memory devices. The idea of decoupling, precisely the decoupling of bandwidth match between memory bus and a single rank of devices, can also be applied to other types of memory systems including FB-DIMM. Our experimental results show that a decoupled DIMM system of 2667MT/s bus data rate and 1333MT/s device data rate improves the performance of memory-intensive workloads by 51% on average over a conventional memory system of 1333MT/s data rate. Alternatively, a decoupled DIMM system of 1600MT/s bus data rate and 800MT/s device data rate incurs only 8% performance loss when compared with a conventional system of 1600MT/s data rate, with 16% reduction on the memory power consumption and 9% saving on memory energy.
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