Nd:YVO4振荡器中掺钕浓度为%时的光学效率为0.5

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI:10.1109/ESCINANO.2010.5701065

G. Krishnan, N. Bidin

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引用次数: 0

摘要

在激光二极管的低抽运功率下，在Nd:YVO4晶条中进行了掺钕浓度为0.5%的激光束。在本研究中，微激光器是通过保持一定厚度的条状晶体形成的，就像一个平面-平面光学谐振腔。采用808 nm二极管激光器作为抽运源。将泵浦功率集中在晶体棒表面，使高功率密度源定位在晶体棒表面。结果表明，Nd3+原子的激发产生1064 nm的受激辐射。实验结果表明，掺钕浓度为0.5% at %的Nd:YVO4晶体条的光-光转换为4.8%，阈值功率为1403.8 mW。

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Optical efficiency Of 0.5 at % Nd:doped concentration in Nd:YVO4 oscillator

The laser beam of 0.5 at % Nd:doped concentration in Nd:YVO4 crystal bar is performed under low pumping power of laser diode. In this investigation, a micro-laser is formed by keeping a thickness of bar crystal to be as a plane-plane optical resonator. Diode laser (808 nm) was used as the pumping source. The pump power was focused to localize the high power density of source the crystal bar surface. As a result, excitation of Nd3+ atom produce stimulated emission with 1064 nm. Our experimental result shows the optical-optical conversion of the 0.5 at % Nd:doped concentration in Nd:YVO4 crystal bar is 4.8 % with threshold power of 1403.8 mW.

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2010 International Conference on Enabling Science and Nanotechnology (ESciNano)

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