半导体漂移室。一种新型电荷输运方案的应用

Emilio Gatti , Pavel Rehak
{"title":"半导体漂移室。一种新型电荷输运方案的应用","authors":"Emilio Gatti ,&nbsp;Pavel Rehak","doi":"10.1016/0167-5087(84)90113-3","DOIUrl":null,"url":null,"abstract":"<div><p>The purpose of this paper is to describe a novel charge transport scheme in semiconductors, in which the field responsible for the charge transport is independent of the depletion field. The application of the novel charge transport scheme leads to the following new semiconductor detectors: </p><ul><li><span>1.</span><span><p>1) Semiconductor drift chamber;</p></span></li><li><span>2.</span><span><p>2) Ultralow capacitance - large area semiconductor X-ray spectrometers and photodiodes;</p></span></li><li><span>3.</span><span><p>3) Fully depleted thick CCD.</p></span></li></ul><p>Special attention is paid to the concept of the semiconductor drift chamber as a position sensing detecter for high energy charged particles. Position resolution limiting factors are considered and the values of the resolutions are given.</p></div>","PeriodicalId":100972,"journal":{"name":"Nuclear Instruments and Methods in Physics Research","volume":"225 3","pages":"Pages 608-614"},"PeriodicalIF":0.0000,"publicationDate":"1984-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-5087(84)90113-3","citationCount":"658","resultStr":"{\"title\":\"Semiconductor drift chamber — An application of a novel charge transport scheme\",\"authors\":\"Emilio Gatti ,&nbsp;Pavel Rehak\",\"doi\":\"10.1016/0167-5087(84)90113-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The purpose of this paper is to describe a novel charge transport scheme in semiconductors, in which the field responsible for the charge transport is independent of the depletion field. The application of the novel charge transport scheme leads to the following new semiconductor detectors: </p><ul><li><span>1.</span><span><p>1) Semiconductor drift chamber;</p></span></li><li><span>2.</span><span><p>2) Ultralow capacitance - large area semiconductor X-ray spectrometers and photodiodes;</p></span></li><li><span>3.</span><span><p>3) Fully depleted thick CCD.</p></span></li></ul><p>Special attention is paid to the concept of the semiconductor drift chamber as a position sensing detecter for high energy charged particles. Position resolution limiting factors are considered and the values of the resolutions are given.</p></div>\",\"PeriodicalId\":100972,\"journal\":{\"name\":\"Nuclear Instruments and Methods in Physics Research\",\"volume\":\"225 3\",\"pages\":\"Pages 608-614\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0167-5087(84)90113-3\",\"citationCount\":\"658\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nuclear Instruments and Methods in Physics Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0167508784901133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments and Methods in Physics Research","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0167508784901133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 658

摘要

本文的目的是描述半导体中一种新的电荷输运方案,其中负责电荷输运的场与耗尽场无关。新电荷输运方案的应用导致了以下新型半导体探测器:1.1)半导体漂移室;2.2)超低电容-大面积半导体x射线光谱仪和光电二极管;3.3)全耗尽厚CCD。特别注意半导体漂移室作为高能带电粒子的位置传感探测器的概念。考虑了位置分辨率的限制因素,给出了位置分辨率的取值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Semiconductor drift chamber — An application of a novel charge transport scheme

The purpose of this paper is to describe a novel charge transport scheme in semiconductors, in which the field responsible for the charge transport is independent of the depletion field. The application of the novel charge transport scheme leads to the following new semiconductor detectors:

  • 1.

    1) Semiconductor drift chamber;

  • 2.

    2) Ultralow capacitance - large area semiconductor X-ray spectrometers and photodiodes;

  • 3.

    3) Fully depleted thick CCD.

Special attention is paid to the concept of the semiconductor drift chamber as a position sensing detecter for high energy charged particles. Position resolution limiting factors are considered and the values of the resolutions are given.

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